High-resolution x-ray diffraction study of In0.25Ga0.75Sb/InAs superlattice

被引：5

作者：

Vigliante, A ^{[1
]}

Homma, H ^{[1
]}

Zborowski, JT ^{[1
]}

Golding, TD ^{[1
]}

Moss, SC ^{[1
]}

机构：

[1] Univ Houston, Dept Phys, Houston, TX 77204 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 1999年 / 14卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1999.0236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An In0.25Ga0.75Sb/InAs strained-layer superlattice, grown by molecular-beam epitaxy (MBE) on a GaSb[001] substrate, has been characterized by four-circle x-ray diffractometry. This system, proposed by Maliot and Smith for ir detection application, is challenging because of the two group V species and the likelihood of cross-incorporation of the different elements during growth, leading possibly to interdiffusion and thus, to a more diffuse interface. High-resolution x-ray diffraction (XRD) profiles were obtained about several reciprocal lattice points in order to extract a reliable set of structural parameters. The profiles were then successfully modeled by computer simulation. The presence of many sharp higher-order satellite reflections in the XRD profiles is a measure of the high quality of the superlattices. The normal and lateral structural coherence was also measured and will be discussed.

引用

页码：1744 / 1751

页数：8

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