Boron diffused emitters passivated with Al2O3 films

被引:0
作者
Masmitja, G. [1 ]
Ortega, P. [1 ]
Lopez, G. [1 ]
Calle, E. [1 ]
Garcia, M. [1 ]
Martin, I. [1 ]
Orpella, A. [1 ]
Voz, C. [1 ]
Alcubilla, R. [1 ]
机构
[1] Univ Politecn Cataluna, Micro & Nano Technol Res Grp MNT, Barcelona, Spain
来源
PROCEEDINGS OF THE 2013 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE 2013) | 2013年
关键词
Boron emitter; Al2O3; silicon; solar cells; lifetime;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3 (25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance R-sh range from 20 to 250 Omega/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities J(oe)'s were extracted from lifetime measurements resulting in J(oe)'s values ranging from 10 to 150 fA/cm(2) depending on R-sh. These results are in the-state-of-the-art in boron emitter passivation.
引用
收藏
页码:329 / 332
页数:4
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