Novel Structure of CMOS Voltage-to-Current Converter for High-Voltage Applications

被引：0

作者：

Jankowski, M. ^{[1
]}

Napieralski, A. ^{[1
]}

机构：

[1] Tech Univ Lodz, Dept Microelect & Comp Sci, Wolczanska 221-223, PL-90924 Lodz, Poland

来源：

NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL | 2012年

关键词：

voltage-to-current conversion; high-voltage Silicon-on-Insulator process; high-voltage design; voltage signal inversion;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is focused on design of (high-voltage) voltage-to-current (V/I) conversion circuit. The presented circuit is a specialized solution of a specific design problem. It has been developed to work in pair with current-to-voltage (I/V) converter which cancels possible drawbacks of the V/I converter working as a stand-alone device. Circuitry presented in this paper has been simulated using the data for HV SoI process. The results are included in the paper.

引用

页码：578 / 581

页数：4

共 5 条

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[2]

Jankowski M., 2011, 2011 MIXDES - 18th International Conference "Mixed Design of Integrated Circuits & Systems", P237

[3]

Jankowski M., 2011, 2011 MIXDES - 18th International Conference "Mixed Design of Integrated Circuits & Systems", P289

[4] 0.35-μm CMOS-process-based Voltage-to-current Converter Design for an Analog OFDM Device [J].

Kim, Seong-Kweon ;

Park, Goo-Man ;

Cha, Jae-Sang .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (01) :336-340

[5]

Lopez-Martm A. J., 2007, ELECTRON LETT, V43, P5

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