Electrochemical anodic oxidation of nitrogen doped carbon nanowall films: X-ray photoelectron and Micro-Raman spectroscopy study
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Achour, A.
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Univ Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Achour, A.
[1
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Vizireanu, S.
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Natl Inst Laser Plasma & Radiat Phys, RO-077125 Bucharest, Romania
Petr Gas Univ Ploiesti, Ploiesti 10068, RomaniaUniv Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Vizireanu, S.
[2
,3
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Dinescu, G.
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Natl Inst Laser Plasma & Radiat Phys, RO-077125 Bucharest, RomaniaUniv Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Dinescu, G.
[2
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Le Brizoual, L.
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Univ Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Le Brizoual, L.
[1
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Djouadi, M. -A.
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Univ Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Djouadi, M. -A.
[1
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Boujtita, M.
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Univ Nantes, CNRS, UNAM, CEISAM, F-44322 Nantes 3, FranceUniv Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Boujtita, M.
[4
]
机构:
[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, F-44322 Nantes 3, France
Unintentional nitrogen doped carbon nanowall (CNW) films were oxidized through anodic polarization in different applied potential windows, in a mild neutral K2SO4 electrolyte solution. Applied potentials in the range of [0-1], [0-1.5] and [0-2] V vs. SCE were explored. The films were characterized with X-ray photoelectron (XPS) and Micro-Raman spectroscopy, in order to investigate the surface chemistry and structural changes after treatment, respectively. The XPS analysis revealed that this electrochemical treatment leads to an increase of oxygen functional groups, and influences the nitrogen proportion and bonding configuration (such as pyridinic/pyridonic nitrogen) on the film surface at room temperature. In particular, an obvious enhancement of pyrrolic/pyridonic nitrogen doping of CNWs via electrochemical cycling in the range of [0-1.5] and [0-2] V vs. SCE was achieved. Such enhancement happened, because of the oxidation of nitrogen atoms in pyridine as a result of OH ions injection upon electrochemical cycling. Micro-Raman analysis indicates structural quality degradation with increasing the applied potential window. Moreover, the electrochemical capacitance of CNW films was increased after treatment in the range of [0-1] and [0-1.5] and decreased in the range of [0-2] V vs. SCE. The results show that harsh oxidation happened in the range [0-2] V. (C) 2013 Published by Elsevier B. V.
机构:
AIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Hori, Hironobu
Shikano, Masahiro
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AIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Shikano, Masahiro
Kobayashi, Hironori
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AIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Kobayashi, Hironori
Koike, Shinji
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AIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Koike, Shinji
Sakaebe, Hikari
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AIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Sakaebe, Hikari
Saito, Yoshiyasu
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AIST, AIST Tsukuba Cent 2, Energy Technol Res Inst, Tsukuba, Ibaraki 3058568, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Saito, Yoshiyasu
Tatsumi, Kuniaki
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AIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Tatsumi, Kuniaki
Yoshikawa, Hideki
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机构:
Natl Inst Mat Sci, Beamline Stn, Sayo, Hyogo 6795148, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan
Yoshikawa, Hideki
Ikenaga, Eiji
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机构:
Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, JapanAIST, Res Inst Ubiquitous Energy Devices, Ikeda, Osaka 5638577, Japan