Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts

被引：3

作者：

Banu, Viorel ^{[1
]}

Godignon, Philippe ^{[1
]}

Jorda, Xavier ^{[1
]}

Perpinya, Xavier ^{[1
]}

Millan, Jose ^{[1
]}

机构：

[1] CSIC, IMB CNM, Bellaterra 080193, Spain

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

Surge current; SiC; Schottky diode; packaging; press-pack; high temperature; interconnection;

D O I：

10.4028/www.scientific.net/MSF.740-742.873

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This work presents experimental results on surge current capability of SiC Schottky diodes performed on free-floating press-pack encapsulation technologies. For the tests, we used a homemade tester. The aim of our studies is to improve the current robustness and power density of Silicon Carbide (SiC) devices able to operate at temperatures over 300C degrees. Various technological approaches have to be considered, mainly on the interconnection technique and metallization layers in order to improve the power density and temperature operation of the diodes. Our investigation showed a strong improvement of electro-thermal performances, and especially the surge current capability that is almost doubled by using press-pack encapsulation.

引用

页码：873 / 876

页数：4

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