Tracks induced by swift heavy ions in semiconductors -: art. no. 045206

被引：98
作者：
Szenes, G
Horváth, ZE
Pécz, B
Pászti, F
Tóth, L
机构：
[1] Eotvos Lorand Univ, Dept Gen Phys, H-1518 Budapest, Hungary
[2] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
[3] Hungarian Acad Sci, Res Inst Particle & Nucl Phys, H-1525 Budapest, Hungary
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.65.045206
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InSb, GaSb, InP, InAs, and GaAs single crystals were irradiated with Pb ions in the range of 385-2170 MeV. The samples were studied by transmission and high-resolution electron microscopy and Rutherford back-scattering in channeling geometry. The energetic ions induced isolated tracks in all crystals but GaAs. The thermal spike analysis revealed that the variation of the damage cross section with the ion energy is considerably weaker than in insulators. The widths of the thermal spike a(0) was estimated. The analysis was extended to recent C(60) experiments on Ge and Si. A quantitative relation was found between a (0) and the gap energy E(g) : a(0) is reduced with increasing E(g), and its lowest value is close to that found in insulators.
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收藏
页码：452061 / 452065
页数：5
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