Demonstration of a hybrid silicon evanescent quantum dot laser

被引:0
作者
Jang, Bongyong [1 ,2 ]
Tanabe, Katsuaki [2 ,3 ]
Kako, Satoshi [2 ]
Iwamoto, Satoshi [1 ,2 ]
Tsuchizawa, Tai [4 ]
Nishi, Hidetaka [4 ]
Hatori, Nobuaki [5 ]
Noguchi, Masataka [5 ]
Nakamura, Takahiro [5 ]
Takemasa, Keizo [6 ]
Sugawara, Mitsuru [6 ]
Arakawa, Yasuhiko [1 ,2 ]
机构
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan
[3] Kyoto Univ, Dept Chem Engn, Kyoto 6158510, Japan
[4] NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
[5] Photon Elect Technol Res Assoc, Tsukuba, Ibaraki 3058569, Japan
[6] QD Laser Inc, Kawasaki, Kanagawa 2100855, Japan
来源
2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) | 2016年
关键词
Quantum dot laser; Hybrid silicon laser; Silicon photonics; Photonic integrated circuit; Wafer bonding;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A hybrid silicon quantum dot laser evanescently coupled to a silicon waveguide has been demonstrated for the first time. We have observed laser emission from the silicon waveguide and achieved high-temperature operation over 100 degrees C.
引用
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页数:3
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