Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers

被引：6
作者：
Kalinina, E
Kholujanov, G
Solov'ev, V
Strel'chuk, A
Kossov, V
Yafaev, R
Kovarskii
Shchukarev, A
Obyden, S
Saparin, G
Ivannikov, P
Hallén, A
Konstantinov, A
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Elect Optron, St Petersburg 194223, Russia
[3] Mekhanobr Analyt Ctr, St Petersburg 199026, Russia
[4] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
[5] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden
[6] Acreo, SE-16440 Kista, Sweden
来源：
APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期
关键词：
silicon carbide; ion implantation; p-n junctions; defects;
D O I：
10.1016/S0169-4332(01)00682-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of ion implantation doping (ID) with high doses of Al followed by short high-temperature annealing of n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) has been studied. The comparative investigations of the structural and electrical properties, lateral and as a function of depth, in the CVD layers before and after Al ID p(+)n junction formations were determined by several different methods. Structural improvement of the CVD epitaxial layers close to Al ID p(+)n junction positions was revealed for the first time. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：323 / 329
页数：7
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