Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers

被引：6

作者：

Kalinina, E

Kholujanov, G

Solov'ev, V

Strel'chuk, A

Kossov, V

Yafaev, R

Kovarskii

Shchukarev, A

Obyden, S

Saparin, G

Ivannikov, P

Hallén, A

Konstantinov, A

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Elect Optron, St Petersburg 194223, Russia

[3] Mekhanobr Analyt Ctr, St Petersburg 199026, Russia

[4] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

[5] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden

[6] Acreo, SE-16440 Kista, Sweden

来源：

APPLIED SURFACE SCIENCE | 2001年 / 184卷 / 1-4期

关键词：

silicon carbide; ion implantation; p-n junctions; defects;

D O I：

10.1016/S0169-4332(01)00682-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of ion implantation doping (ID) with high doses of Al followed by short high-temperature annealing of n-type 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) has been studied. The comparative investigations of the structural and electrical properties, lateral and as a function of depth, in the CVD layers before and after Al ID p(+)n junction formations were determined by several different methods. Structural improvement of the CVD epitaxial layers close to Al ID p(+)n junction positions was revealed for the first time. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：323 / 329

页数：7

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