Ultralong Silicon Grains Grown by Excimer Laser Crystallization

被引：7

作者：

Shimoto, Shigeyuki ^{[1
]}

Katou, Tomoya ^{[1
]}

Endo, Takahiko ^{[1
]}

Taniguchi, Yukio ^{[1
]}

Ohno, Takashi ^{[1
]}

Azuma, Kazufumi ^{[1
]}

Matsumura, Masakiyo ^{[1
]}

机构：

[1] Adv LCD Technol Dev Ctr Co Ltd ALTEDEC, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 10期

关键词：

polysilicon; LTPS; excimer laser annealing; lateral growth; phase modulator; thin-film transistor; system on glass;

D O I：

10.1143/JJAP.47.7793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The factors affecting the elongation of Si grains were investigated for the excimer-laser-induced lateral grain growth method. The length of Si grains was found to depend on the laser light intensity profile, the waveform of the laser light pulse, particularly at its tail region, and the sample structure. Grains as long as 25 mu m were successfully grown at room temperature using it combination of a V-shaped light intensity profile, a light pulse waveform with a long tail, and a stacked sample structure with a cap layer. Grains of 11 mu m in length were also grown in a capless sample. [DOI: 10.1143/JJAP.47.7793]

引用

页码：7793 / 7797

页数：5

共 16 条

[1] Production solutions in excimer laser thin film crystallization
Brune, J
Nikolaus, B
Simon, F
[J]. THIN SOLID FILMS, 2005, 487 (1-2) : 85 - 88
[2] LATERAL GROWTH OF POLY-SI FILM BY EXCIMER-LASER AND ITS THIN-FILM-TRANSISTOR APPLICATION
CHOI, DH
SADAYUKI, E
SUGIURA, O
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 70 - 74
[3] Endo T, 2008, JPN J APPL PHYS, V47, P1862, DOI [10.1143/JJAP.47.1862, 10.1143/JJAP.47.18621]
[4] High-performance polycrystalline silicon thin film transistors on non-alkali glass produced using continuous wave laser lateral crystallization
Hara, A
Takeuchi, F
Takei, M
Suga, K
Yoshino, K
Chida, M
Sano, Y
Sasaki, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (3B): : L311 - L313
[5] Hatano M., 2002, SID INT S, V33, P158
[6] Importance of pure Si films in pulsed-laser-induced lateral growth
Hiramatsu, M
Ogawa, H
Kimura, Y
Jyumonji, M
Akita, N
Katou, T
Matsumura, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (5A): : 3922 - 3926
[7] An advanced sample structure for large-grain growth by excimer laser crystallization
Hiramatsu, Masato
Ogawa, Hiroyuki
Jyumonji, Masayuki
Katou, Tomoya
Akita, Noritaka
Matsumura, Masakiyo
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (10) : G883 - G886
[8] Crystalline Si films for integrated active-matrix liquid-crystal displays
Im, JS
Sposili, RS
[J]. MRS BULLETIN, 1996, 21 (03) : 39 - 48
[9] EFFECTS OF LIGHT-PULSE DURATION ON EXCIMER-LASER CRYSTALLIZATION CHARACTERISTICS OF SILICON THIN-FILMS
ISHIHARA, R
YEH, WC
HATTORI, T
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A): : 1759 - 1764
[10] Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices
Matsumura, M
Oh, CH
[J]. THIN SOLID FILMS, 1999, 337 (1-2) : 123 - 128

← 1 2 →