Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions

被引：17
作者：
Sahadevan, Ajeesh M. [1 ]
Tiwari, Ravi K. [2 ]
Kalon, Gopinadhan [1 ]
Bhatia, Charanjit S. [1 ]
Saeys, Mark [2 ]
Yang, Hyunsoo [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
[2] Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 117576, Singapore
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期
关键词：
TOTAL-ENERGY CALCULATIONS; ROOM-TEMPERATURE; EFFICIENT METHOD; STM IMAGES; MAGNETORESISTANCE; CONDUCTANCE; SIMULATION;
D O I：
10.1063/1.4738787
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the effect of strain on magnetic tunnel junctions induced by a diamond like carbon (DLC) film. The junction resistance as well as the tunnel magnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green's function quantum transport calculations show that the application of biaxial strain increases the conductance for both the parallel and anti-parallel configurations. However, the conductance for the minority channel and for the anti-parallel configuration is significantly more sensitive to strain, which drastically increases transmission through a MgO tunnel barrier, therefore, the TMR ratio decreases with biaxial strain. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738787]
引用
收藏
页数：5
相关论文
共 50 条
  • [31] Magnetoelectric Effect in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
    Pashen'kin, I. Yu
    Sapozhnikov, M., V
    Gusev, N. S.
    Rogov, V. V.
    Tatarskii, D. A.
    Fraerman, A. A.
    Volochaev, M. N.
    JETP LETTERS, 2020, 111 (12) : 690 - 693
  • [32] Effects of superparamagnetism in MgO based magnetic tunnel junctions
    Shen, Weifeng
    Schrag, Benaiah D.
    Girdhar, Anuj
    Carter, Matthew J.
    Sang, Hai
    Xiao, Gang
    PHYSICAL REVIEW B, 2009, 79 (01)
  • [33] Fabrication and characterization of MgO-based magnetic tunnel junctions for spin momentum transfer switching
    Assefa, Solomon
    Nowak, J.
    Sun, J. Z.
    O'Sullivan, E.
    Kanakasabapathy, S.
    Gallagher, W. J.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (06)
  • [34] Manganese diffusion in annealed magnetic tunnel junctions with MgO tunnel barriers
    Larson, D. J.
    Marquis, E. A.
    Rice, P. M.
    Prosa, T. J.
    Geiser, B. P.
    Yang, S. -H.
    Parkin, S. S. P.
    SCRIPTA MATERIALIA, 2011, 64 (07) : 673 - 676
  • [35] CoFeB/MgO-based magnetic tunnel junctions for film-type strain gauge
    Saito, K.
    Imai, A.
    Ota, S.
    Koyama, T.
    Ando, A.
    Chiba, D.
    APPLIED PHYSICS LETTERS, 2022, 120 (07)
  • [36] Temperature dependence of inverted tunneling magnetoresistance in MgO-based magnetic tunnel junctions
    Feng, J. F.
    Feng, Gen
    Ma, Q. L.
    Han, X. F.
    Coey, J. M. D.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2010, 322 (9-12) : 1446 - 1448
  • [37] Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory
    Hosotani, Keiji
    Nagamine, Makoto
    Ueda, Tomomasa
    Aikawa, Hisanori
    Ikegawa, Sumio
    Asao, Yoshiaki
    Yoda, Hiroaki
    Nitayama, Akihiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [38] Effects of B and C doping on tunneling magnetoresistance in CoFe/MgO magnetic tunnel junctions
    Chen, Andy Paul
    Burton, J. D.
    Tsymbal, Evgeny Y.
    Feng, Yuan Ping
    Chen, Jingsheng
    PHYSICAL REVIEW B, 2018, 98 (04)
  • [39] Correlation between symmetry-selective transport and spin-dependent resonant tunneling in fully epitaxial Cr/ultrathin-Fe/MgO/Fe(001) magnetic tunnel junctions
    Niizeki, Tomohiko
    Sukegawa, Hiroaki
    Mitani, Seiji
    Tezuka, Nobuki
    Inomata, Koichiro
    APPLIED PHYSICS LETTERS, 2011, 99 (18)
  • [40] Anomalous spin-dependent tunneling statistics in Fe/MgO/Fe junctions induced by disorder at the interface
    Yan, Jiawei
    Wang, Shizhuo
    Xia, Ke
    Ke, Youqi
    PHYSICAL REVIEW B, 2018, 97 (01)
12345