Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

被引：41

作者：

Nagashima, Toru ^{[1
,2
]}

Kubota, Yuki ^{[1
]}

Kinoshita, Toru ^{[1
]}

Kumagai, Yoshinao ^{[2
]}

Xie, Jinqiao ^{[3
]}

Collazo, Ramon ^{[4
]}

Murakami, Hisashi ^{[2
]}

Okamoto, Hiroshi ^{[5
]}

Koukitu, Akinori ^{[2
]}

Sitar, Zlatko ^{[3
,4
]}

机构：

[1] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[3] HexaTech Inc, Morrisville, NC 27560 USA

[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[5] Hirosaki Univ, Dept Elect & Informat Technol, Hirosaki, Aomori 0368561, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 12期

基金：

日本学术振兴会;

关键词：

CRYSTAL-GROWTH; BULK; COMPLEXES;

D O I：

10.1143/APEX.5.125501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Freestanding AlN substrates with various carbon (C) concentrations were prepared from C-doped thick layers grown by hydride vapor phase epitaxy (HVPE) on bulk AlN substrates prepared by physical vapor transport (PVT). The structural properties of the AlN substrates up to a C concentration of 3 x 1019 cm(-3) were the same as those of the nominally undoped substrates, while the absorption coefficient alpha at 265 nm was increased by C doping from 6.6 to 97 cm(-1), when C concentration changed from <2 x 10(17) to 1 x 10(19) cm(-3), respectively. Photoluminescence (PL) below 4.0 eV also increased by C doping. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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