Morphology and field-effect transistor characteristics of semicrystalline poly(3-hexylthiophene) and poly(stearyl acrylate) blend nanowires

被引:19
作者
Lin, Jung-Chuan [2 ]
Lee, Wen-Ya [2 ]
Wu, Hung-Chin [2 ]
Chou, Chih-Chieh [3 ]
Chiu, Yu-Cheng [2 ]
Sun, Ya-Sen [1 ]
Chen, Wen-Chang [2 ]
机构
[1] Natl Cent Univ, Dept Chem & Mat Engn, Tao Yuan 32001, Taiwan
[2] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10617, Taiwan
关键词
THIN-FILM TRANSISTORS; EFFECT MOBILITY; ELECTRICAL-PROPERTIES; CHARGE-TRANSPORT; PERFORMANCE; POLYTHIOPHENE; COPOLYMERS; NANOFIBERS; BLOCK;
D O I
10.1039/c2jm31362f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The morphology and charge transport characteristics of semicrystalline poly(3-hexylthiophene) (P3HT) and semicrystalline poly(stearyl acrylate) (PSA) or amorphous poly(methyl methacrylate) (PMMA) with various blending ratios were systematically investigated using different solvents. The P3HT-PSA films prepared from CH2Cl2 formed well-defined P3HT nanowires with an average diameter of 30 nm, which was larger than that (similar to 14 nm) of the P3HT-PMMA films, as evidenced by TEM and AFM. The P3HT-PSA nanowire based field effect transistors (FET) could achieve a high hole mobility of 3.2 x 10(-3) cm(2) V-1 s(-1) using only 2 wt% P3HT composition. The maximum FET mobility of 7.86 x 10(-3) cm(2) V-1 s(-1) with the on/off ratio of 10(5) was obtained in the 10 wt% P3HT-PSA blends, which were higher than those of pristine P3HT and P3HT-PMMA devices. The semicrystalline PSA probably facilitated large P3HT crystallites and led to high FET mobility. Also, the P3HT-PSA FET devices showed lower percolation threshold and better ambient stability than the P3HT-PMMA devices. These results indicated that the crystalline non-conjugated polymers played a critical role in the charge transport and air stability of FETs based on conjugated polymer blends.
引用
收藏
页码:14682 / 14690
页数:9
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