Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

被引：708

作者：

Jeong, Jae Kyeong ^{[1
]}

Yang, Hui Won ^{[1
]}

Jeong, Jong Han ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

机构：

[1] Samsung SDI Co LTD, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2990657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (V-th) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress. (C) 2008 American Institute of Physics.

引用

页数：3

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