Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

被引：708

作者：

Jeong, Jae Kyeong ^{[1
]}

Yang, Hui Won ^{[1
]}

Jeong, Jong Han ^{[1
]}

Mo, Yeon-Gon ^{[1
]}

Kim, Hye Dong ^{[1
]}

机构：

[1] Samsung SDI Co LTD, Corp R&D Ctr, Yongin 449902, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2990657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any passivation layer showed a huge threshold voltage (V-th) shift under positive gate voltage stress, the suitably passivated device did not exhibit any Vth shift. The charge trapping model, which has been believed to be a plausible mechanism, cannot by itself explain this behavior. Instead, the Vth instability was attributed to the interaction between the exposed IGZO backsurface and oxygen and/or water in the ambient atmosphere during the gate voltage stress. (C) 2008 American Institute of Physics.

引用

页数：3

共 50 条

[21] High-Performance Indium-Gallium-Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide [J].

Marroun, Abdelhafid ;

Touhami, Naima Amar ;

El Hamadi, Taj-eddin ;

El Bakkali, Moustapha .

12TH INTERNATIONAL CONFERENCE INTERDISCIPLINARITY IN ENGINEERING (INTER-ENG 2018), 2019, 32 :729-733

[22] An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors [J].

Li, Jiapeng ;

Lu, Lei ;

Feng, Zhuoqun ;

Kwok, Hoi Sing ;

Wong, Man .

APPLIED PHYSICS LETTERS, 2017, 110 (14)

[23] Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination [J].

Gosain, Dharam Pal ;

Tanaka, Tsutomu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)

[24] High sensitivity pH sensors based on amorphous indium-gallium-zinc oxide thin-film transistors [J].

Iwamatsu, Shinnosuke ;

Abe, Yutaka ;

Yahagi, Toru ;

Kobayashi, Seiya ;

Takechi, Kazushige ;

Tanabe, Hiroshi .

IEEJ Transactions on Sensors and Micromachines, 2015, 135 (06) :192-198

[25] Low-voltage indium gallium zinc oxide thin film transistors on paper substrates [J].

Lim, Wantae ;

Douglas, E. A. ;

Norton, D. P. ;

Pearton, S. J. ;

Ren, F. ;

Heo, Young-Woo ;

Son, S. Y. ;

Yuh, J. H. .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

[26] Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress [J].

Lee, Sangwon ;

Jeon, Kichan ;

Park, Jun-Hyun ;

Kim, Sungchul ;

Kong, Dongsik ;

Kim, Dong Myong ;

Kim, Dae Hwan ;

Kim, Sangwook ;

Kim, Sunil ;

Hur, Jihyun ;

Park, Jae Chul ;

Song, Ihun ;

Kim, Chang Jung ;

Park, Youngsoo ;

Jung, U-In .

APPLIED PHYSICS LETTERS, 2009, 95 (13)

[27] Thermally Induced Variation of the Turn-ON Voltage of an Indium-Gallium-Zinc Oxide Thin-Film Transistor [J].

Lu, Lei ;

Li, Jiapeng ;

Wong, Man .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3703-3708

[28] Solution-Based Indium Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide [J].

Jeon, Woojin ;

Choi, Pyungho ;

Park, Areum ;

Lee, Donghyeon ;

Choi, Donghee ;

Lee, Sangmin ;

Choi, Byoungdeog .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2020, 20 (11) :6643-6647

[29] Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors [J].

Huang, Xiaoming ;

Wu, Chenfei ;

Lu, Hai ;

Ren, Fangfang ;

Chen, Dunjun ;

Jiang, Rong ;

Zhang, Rong ;

Zheng, Youdou ;

Xu, Qingyu .

SOLID-STATE ELECTRONICS, 2013, 86 :41-44

[30] Fabrication of suspended amorphous indium-gallium-zinc oxide thin-film transistors using bulk micromachining techniques [J].

Iwamatsu, Shinnosuke ;

Takechi, Kazushige ;

Yahagi, Toru ;

Abe, Yutaka ;

Tanabe, Hiroshi ;

Kobayashi, Seiya .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)

← 1 2 3 4 5 →