Charge Transfer across the n-Type GaN-Electrolyte Interface

被引:24
作者
Schaefer, Susanne [1 ]
Koch, Amelie H. R. [1 ]
Cavallini, Alda [1 ]
Stutzmann, Martin [1 ]
Sharp, Ian D. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
P-TYPE GAN; GALLIUM NITRIDE; SOLID-SOLUTION; PHOTOCATALYST; WATER; TRANSISTORS; OXIDE;
D O I
10.1021/jp302000x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interfacial charge transfer characteristics of n-type GaN are investigated in pure phosphate buffered saline, as well as in solutions containing I-/I-3(-) or hydroquinone/benzoquinone redox couples. Cyclic voltammetry and transient photoresponse measurements in the presence of above-bandgap illumination reveal that hole transfer to the solution is mediated by surface states in all cases. For measurements in pure PBS, a modification of the surface during cyclic potential sweeps is observed. In contrast, the presence of the redox species used in this work efficiently suppresses the oxygen evolution reaction and the associated surface modification. Furthermore, charge transfer to the redox couple is fully reversible using GaN as a dark cathode and photoanode, respectively. The presented study is of significant importance for applications of GaN in photocatalysis and biosensing, where the stability of (bio)functionalized surfaces is an essential requirement.
引用
收藏
页码:22281 / 22286
页数:6
相关论文
共 26 条
[1]   Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors [J].
Baur, B. ;
Howgate, J. ;
von Ribbeck, H. -G. ;
Gawlina, Y. ;
Bandalo, V. ;
Steinhoff, G. ;
Stutzmann, M. ;
Eickhoff, M. .
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[2]   Chemical functionalization of GaN and AlN surfaces [J].
Baur, B ;
Steinhoff, G ;
Hernando, J ;
Purrucker, O ;
Tanaka, M ;
Nickel, B ;
Stutzmann, M ;
Eickhoff, M .
APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3
[3]   Band-edge Potentials of n-type and p-type GaN [J].
Beach, JD ;
Collins, RT ;
Turner, JA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (07) :A899-A904
[4]   Electrochemical pinning of the Fermi level: Mediation of photoluminescence from gallium nitride and zinc oxide [J].
Chakrapani, Vidhya ;
Pendyala, Chandrashekhar ;
Kash, Kathleen ;
Anderson, Alfred B. ;
Sunkara, Mahendra K. ;
Angus, John C. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (39) :12944-12952
[5]   Photoelectrochemical properties of p-type GaN in comparison with n-type GaN [J].
Fujii, K ;
Ohkawa, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L909-L911
[6]   Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates [J].
Howgate, John ;
Schoell, Sebastian J. ;
Hoeb, Marco ;
Steins, Wiebke ;
Baur, Barbara ;
Hertrich, Samira ;
Nickel, Bert ;
Sharp, Ian D. ;
Stutzmann, Martin ;
Eickhoff, Martin .
ADVANCED MATERIALS, 2010, 22 (24) :2632-+
[7]  
Huygens I.M., 2003, PHYS STATUS SOLIDI C, V0, P448
[8]   Electrochemistry and photoetching of n-GaN [J].
Huygens, IM ;
Strubbe, K ;
Gomes, WP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) :1797-1802
[9]   Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl- ions [J].
Huygens, IM ;
Theuwis, A ;
Gomes, WP ;
Strubbe, K .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2002, 4 (11) :2301-2306
[10]   Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility transistors [J].
Kang, BS ;
Ren, F ;
Wang, L ;
Lofton, C ;
Tan, WHW ;
Pearton, SJ ;
Dabiran, A ;
Osinsky, A ;
Chow, PP .
APPLIED PHYSICS LETTERS, 2005, 87 (02)