Dependence of backgating on the type of deep centres in the substrate of GaAsFETs

被引：6

作者：

Sengouga, Nouredine ^{[1
]}

Abdeslam, Noura A. ^{[1
]}

机构：

[1] Mohammed Khider Univ, Lab Met & Semiconducting Mat, Biskra 07000, Algeria

来源：

SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 07期

关键词：

GaAsFET; backgating; threshold; deep traps;

D O I：

10.1016/j.sse.2008.03.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reduction of the conductance of GaAs FETs by a negative voltage applied to the substrate, termed backgating or sidegating, is numerically modelled to clarify which type of traps is responsible. Modelling is carried out for several sets of deep levels in the substrate. It is observed that deep acceptors are mainly responsible for backgating independently of the shallow level type in the substrate. In this case there is no threshold. When deep donors are present in the substrate, it is observed that backgating is reduced and there is a threshold. The presence of a buffer layer between the channel and the semi-insulating substrate also helps in reducing backgating. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1039 / 1042

页数：4

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