Optical RAM Row Access With WDM-Enabled All-Passive Row/Column Decoders

被引：5

作者：

Alexoudi, Theonitsa ^{[1
,2
]}

Papaioannou, Sotirios ^{[1
,2
]}

Kanellos, George T. ^{[2
]}

Miliou, Amalia ^{[1
,2
]}

Pleros, Nikos ^{[1
,2
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Informat, Thessaloniki 54124, Greece

[2] Inst Informat Technol, Ctr Res & Technol Hellas, Thessaloniki 57001, Greece

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 07期

关键词：

Optical row decoder; semiconductor optical amplifier (SOA); Mach-Zehnder interferometer (MZI); optical memory; optical RAM; optical signal processing; NANOCAVITIES;

D O I：

10.1109/LPT.2014.2302854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present new architectural perspectives in optical static RAM configurations by exploiting the wavelength dimension in address domain. We present a 2 x 4 optical RAM row decoder (RD) that relies its operation on an all-passive wavelength-selective filtering matrix (lambda-matrix), receiving WDM-formatted address bits (Wordline) as input. The 2 x 4 RD is followed by an semiconductor optical amplifier Mach-Zehnder interferometer access gate and a column decoding unit to provide complete optical RAM row access. Proof-of-concept experimental verification of a 2 x 4 optical RAM RD is shown at 10 Gb/s, providing error-free operation with a peak power penalty lower than 0.2 dB.

引用

页码：671 / 674

页数：4

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