Structural characterization of hard a-C:H films as a function of the methane pressure

被引:6
|
作者
Lacerda, RG [1 ]
Stolojan, V
Cox, DC
Silva, SRP
Marques, FC
机构
[1] Unicamp, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
[2] Univ Surrey, Sch Elect Comp & Math, Guildford GU2 7XH, Surrey, England
基金
巴西圣保罗研究基金会;
关键词
diamond-like carbon; hardness; stress; mechanical properties;
D O I
10.1016/S0925-9635(01)00677-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hard a-C:H films have been deposited at an industrially significant growth rate (similar to0.7 nm/s), with high hardness (similar to19 GPa) and relatively low stress (similar to1.3 GPa.). The films were obtained by the decomposition of methane in a r.f. environment at unusually conditions of high bias (-800 V) and high pressure (similar to12 Pa). The properties of the films were determined using optical transmission spectroscopy, electron energy loss spectroscopy (EELS), Raman spectroscopy, nanohardness, and stress measurements. The structural analysis indicates that the material is composed of approximately 58% sp(2) sites, yet maintaining a relatively high hardness. It is thought that the sp(2) sites contribute to the film hardness. together with the remaining sp(3) C-C sites. The main advantage of the films reported is the very high deposition rate coupled with the relatively low stress, which enables the growth of very thick films (>2 mum) suitable for application such as protective coatings. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:980 / 984
页数:5
相关论文
共 50 条
  • [1] Synthesis, characterization and nanostructuring of (a-C:H):Si and (a-C:H):Si:metal films
    Kirpilenko, G. G.
    Frolov, V. D.
    Zavedeev, E. V.
    Pimenov, S. M.
    Konov, V. I.
    Shelukhin, E. Y.
    Loubnin, E. N.
    DIAMOND AND RELATED MATERIALS, 2006, 15 (4-8) : 1147 - 1150
  • [2] Relation between mechanical and structural properties of silicon-incorporated hard a-C:H films
    Neto, ALB
    Santos, RA
    Freire, FL
    Camargo, SS
    Carius, R
    Finger, F
    Beyer, W
    THIN SOLID FILMS, 1997, 293 (1-2) : 206 - 211
  • [3] Relation between mechanical and structural properties of silicon-incorporated hard a-C:H films
    Universidade Federal do Rio de, Janeiro, Rio de Janeiro, Brazil
    Thin Solid Films, 1-2 (206-211):
  • [4] Experimental analysis of the thermal annealing of hard a-C:H films
    Peter, S.
    Guenther, M.
    Gordan, O.
    Berg, S.
    Zahn, D. R. T.
    Seyller, T.
    DIAMOND AND RELATED MATERIALS, 2014, 45 : 43 - 57
  • [5] Hard a-C:H films deposited at high deposition rates
    Marques, FC
    Lacerda, RG
    de Lima, MM
    Vilcarromero, J
    THIN SOLID FILMS, 1999, 343 : 222 - 225
  • [6] On the hardness of a-C:H films prepared by methane plasma decomposition
    Marques, FC
    Lacerda, RG
    Odo, GY
    Lepienski, CM
    THIN SOLID FILMS, 1998, 332 (1-2) : 113 - 117
  • [7] Atomic scale characterization of nanostructured a-C:H films
    L. Zoppi
    L. Colombo
    D. Donadio
    The European Physical Journal B - Condensed Matter and Complex Systems, 2002, 27 : 335 - 340
  • [8] Atomic scale characterization of nanostructured a-C:H films
    Zoppi, L
    Colombo, L
    Donadio, D
    EUROPEAN PHYSICAL JOURNAL B, 2002, 27 (03): : 335 - 340
  • [9] Ion irradiation effects on a-C:H, a-C:N:H and a-C:F:H films
    Galvao, J. R.
    Luce, F. P.
    Baptista, D. L.
    Maia da Costa, M. E. M.
    Lepienski, C. M.
    Zawislak, F. C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 : 409 - 413
  • [10] Optical characterization of hydrogenated amorphous carbon (a-C:H) thin films deposited from methane plasma
    Hong, JG
    Goullet, A
    Turban, G
    THIN SOLID FILMS, 2000, 364 (1-2) : 144 - 149