Enhanced oxygen precipitation in neutron-irradiated nitrogen-doped Czochralski silicon crystal

被引：10

作者：

Cui, Can ^{[1
,2
]}

Ma, Xiangyang ^{[1
]}

Yang, Deren ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Zhejiang Sci Tech Univ, Dept Phys, Hangzhou 310018, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 12期

关键词：

elemental semiconductors; impurity distribution; neutron effects; nitrogen; precipitation; semiconductor doping; silicon; vacancies (crystal);

D O I：

10.1063/1.3050313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.

引用

页数：4

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