Numerical study of self-heating effects of MOSFETs fabricated on SOAN substrate

被引：33
作者：
Zhu, M
Chen, P
Fu, RKY
An, ZH
Lin, CL
Chu, PK [1 ]
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[4] Univ Tokyo, Dept Basic Sci, Tokyo 1538902, Japan
[5] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 06期
基金：
中国国家自然科学基金;
关键词：
aluminum nitride (AIN); numerical simulation; seff-heating effect; silicon-on-insulator (SOI);
D O I：
10.1109/TED.2004.827362
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A two-dimensional numerical analysis is performed to investigate the self-heating effects of metal-oxide-silicon field-effect transistors (MOSFETs) fabricated in silicon-on-aluminum nitride (SOAN) substrate. The electrical characteristics and temperature distribution are simulated and compared to those of bulk and standard silicon-on-insulator (SOI) MOSFETs. The SOAN devices are shown to have good leakage and subhreshold characteristics. Furthermore, the channel temperature and negative differential resistance are reduced during high-temperature operation, suggesting that SOAN can mitigate the self-heating penalty effectively. Our study suggests that AlN is a suitable alternative to silicon dioxide as the buried dielectric in SOI, and expands the applications of SOI to high temperature.
引用
收藏
页码：901 / 906
页数：6
相关论文
共 14 条
[1]   A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect [J].
Awadallah, R ;
Yuan, JS .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (06) :707-712
[2]  
BIEGEL BA, 2000, P HIGH TEMP EL C JUN
[3]   Comparison of self-heating effect in GAA and SOI mosfets [J].
Francis, P ;
Colinge, JP ;
Flandre, D .
MICROELECTRONICS RELIABILITY, 1997, 37 (01) :61-75
[4]   An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance [J].
Hu, MC ;
Jang, SL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :797-801
[5]   Analytical approach to breakdown voltages in thin-film SOI power MOSFETs [J].
Kim, IJ ;
Matsumoto, S ;
Sakai, T ;
Yachi, T .
SOLID-STATE ELECTRONICS, 1996, 39 (01) :95-100
[6]  
KLEINER MB, 1995, P IEEE SEMICOND THER, P122, DOI 10.1109/STHERM.1995.512061
[7]  
LU Q, 1991, PROCEEDINGS OF THE 3RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, P36, DOI 10.1109/ISPSD.1991.146061
[8]   PHYSICAL ORIGIN OF NEGATIVE DIFFERENTIAL RESISTANCE IN SOI TRANSISTORS [J].
MCDAID, LJ ;
HALL, S ;
MELLOR, PH ;
ECCLESTON, W ;
ALDERMAN, JC .
ELECTRONICS LETTERS, 1989, 25 (13) :827-828
[9]   Fabrication of SOI structure with AlN film as buried insulator by Ion-Cut process [J].
Men, CL ;
Xu, Z ;
An, ZH ;
Chu, PK ;
Wan, Q ;
Xie, XY ;
Lin, CL .
APPLIED SURFACE SCIENCE, 2002, 199 (1-4) :287-292
[10]  
Selberherr S., 1984, ANAL SIMULATION SEMI
12