Study of the component distribution in Si/GexSi1-x/Si heterostructures grown by molecular beam epitaxy

被引：6

作者：

Kesler, VG ^{[1
]}

Logvinskii, LM ^{[1
]}

Mashanov, VI ^{[1
]}

Pchelyakov, OP ^{[1
]}

Ul'yanov, VV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

PHYSICS OF THE SOLID STATE | 2002年 / 44卷 / 04期

关键词：

D O I：

10.1134/1.1470563

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reports on a study of the depth profile of components in GeSi heterostructures grown on low-temperature silicon (LTSi: T-gr similar to 350-400degreesC) and porous silicon by molecular-beam epitaxy. An excess Ge concentration was found by Auger electron spectroscopy depth profiling at the GexSi1-x/LTSi interface, which decreased in all samples subjected to annealing. The Ge diffusion activation energy was calculated to be E-a approximate to 1.6 eV in this case. An enhanced Ge concentration was also detected by x-ray photoelectron spectroscopy at the Si cap surface. Possible reasons for the surface enrichment of the silicon layer and of the GexSi1-x film interface by germanium are considered, and the relation between the component distribution and the structural features of plastically strain-relieved layers are discussed. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：709 / 713

页数：5

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