Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

被引：33

作者：

El Gmili, Y. ^{[1
,2
,3
]}

Orsal, G. ^{[1
,4
]}

Pantzas, K. ^{[5
,6
]}

Moudakir, T. ^{[2
]}

Sundaram, S. ^{[2
]}

Patriarche, G. ^{[5
]}

Hester, J. ^{[2
]}

Ahaitouf, A. ^{[1
,2
,3
]}

Salvestrini, J. P. ^{[1
,4
]}

Ougazzaden, A. ^{[2
,6
]}

机构：

[1] Univ Lorraine, LMOPS, EA4423, F-57070 Metz, France

[2] CNRS, UMI 2958, F-57070 Metz, France

[3] USMBA, FST Fes, LSSC, Fes, Morocco

[4] Supelec, LMOPS, EA4423, F-57070 Metz, France

[5] CNRS, LPN, UPR, F-91460 Marcoussis, France

[6] GIT, UMI 2958, F-57070 Metz, France

来源：

ACTA MATERIALIA | 2013年 / 61卷 / 17期

关键词：

Semiconductor materials; InGaN; Multilayer design; Deposition and fabrication; Thin films; EPITAXIAL LAYERS; MOVPE GROWTH; CATHODOLUMINESCENCE; LUMINESCENCE; ABSORPTION; ALLOYS;

D O I：

10.1016/j.actamat.2013.07.041

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth, both detrimental to solar cell applications. Measurements performed by X-ray diffraction, cathodoluminescence and photoluminescence demonstrate that this multilayer growth is a promising approach to increase both the InGaN layer total thickness and In content in InGaN epilayers. As an example, single-phase 120 nm thick InGaN with 14.3% In content is obtained and found to possess high structural quality. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：6587 / 6596

页数：10

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