Circuit modeling of the emitter-wrap-through solar cell

被引:9
作者
Smith, DD
Gee, JM
Bode, MD
Jimeno, JC
机构
[1] Sandia Natl Labs, Photovolta Syst Components Dept, Albuquerque, NM 87185 USA
[2] Univ Basque Country, E-48080 Bilbao, Spain
关键词
back contact solar cells; silicon solar cells; solar cells;
D O I
10.1109/16.791987
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Back-contact solar cells have the potential to reduce module assembly costs and give a higher conversion efficiency. Such a device must be simple to fabricate on an industrial scale and be tolerant of low minority-carrier diffusion lengths. The emitter-wrap-through (EWT) cell is a device design that can meet these goals. In this device, the diffused junction is present on both sides and is connected by laser-drilled holes through the silicon. EWT cells were frequently found to have poor fill factors (FF's) due to shunt-like behavior. The holes were found to possess no defects that adversely affect device performance. However, detailed equivalent circuit modeling of the EWT cell was able to explain the shunt-like behavior. Experiments were performed to confirm the physical mechanisms described by the equivalent circuit model. Device optimization guided by the equivalent circuit model has led to the demonstration of a large area EWT cell with a FF of 77.6% and efficiency of 18.2%.
引用
收藏
页码:1993 / 1999
页数:7
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