Combined electrical transport and capacitance spectroscopy of a MoS2-LiNbO3 field effect transistor

被引：15

作者：

Michailow, Wladislaw ^{[1
,2
]}

Schuelein, Florian J. R. ^{[1
,2
,3
]}

Moeller, Benjamin ^{[1
,2
]}

Preciado, Edwin ^{[4
,5
]}

Nguyen, Ariana E. ^{[4
,5
]}

von Son, Gretel ^{[4
,5
]}

Mann, John ^{[6
]}

Hoerner, Andreas L. ^{[1
,2
]}

Wixforth, Achim ^{[1
,2
,3
]}

Bartels, Ludwig ^{[4
,5
]}

Krenner, Hubert J. ^{[1
,2
,3
]}

机构：

[1] Univ Augsburg, Lehrstuhl Expt Phys 1, Univ Str 1, D-86159 Augsburg, Germany

[2] Univ Augsburg, ACIT, Univ Str 1, D-86159 Augsburg, Germany

[3] NIM, Schellingstr 4, D-80799 Munich, Germany

[4] Univ Calif Riverside, Dept Chem, Riverside, CA 92521 USA

[5] Univ Calif Riverside, Mat Sci & Engn Program, Riverside, CA 92521 USA

[6] Pepperdine Univ, Dept Phys, Malibu, CA 90263 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 02期

基金：

美国国家科学基金会;

关键词：

MOBILITY; ELECTRONICS; TRANSITION; GROWTH;

D O I：

10.1063/1.4973862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured both the current-voltage (I-SD-V-GS) and capacitance-voltage (C-V-GS) characteristics of a MoS2-LiNbO3 field effect transistor. From the measured capacitance, we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured I-SD-V-GS characteristics over the entire range of V-GS. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device, this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only. Published by AIP Publishing.

引用

页数：5

共 23 条

[11] Electric field effect in atomically thin carbon films [J].