Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

被引：11

作者：

Savkina, N ^{[1
]}

Tregubova, A ^{[1
]}

Scheglov, M ^{[1
]}

Solov'ev, V ^{[1
]}

Volkova, A ^{[1
]}

Lebedev, A ^{[1
]}

机构：

[1] IOFFE Inst, St Petersburg 194021, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷

关键词：

3C-SiC epilayer; surface morphology; optical microscopy; X-ray diffraction; EBIC; SE;

D O I：

10.1016/S0921-5107(01)01053-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic silicon carbide (3C-SiC) epilayers with different double position boundaries (DPBs) and stacking faults (SF) density grown on n-6H-SiC Lely substrates by vacuum sublimation epitaxy were characterized by optical microscopy after oxidation in dry O-2 at 1100 degreesC and X-ray topography. Using the methods of electron beam-induced current (EBIC) and secondary electrons (SE), the intermediate 6H-SiC layer at the interface between 3C-SiC epilayer with high DPBs and SF density and 6H-SiC substrate was detected. Triangular shape regions crossing the upper 3C-SiC epilayer represent local p-n junctions and look like the cross-section transmission electron microscopy (TEM) images of structures with SF. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：317 / 320

页数：4

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