Deposition of Tin Oxide Thin Films by Successive Ionic Layer Adsorption Reaction Method and Its Characterization

被引：6

作者：

Raj, Shipra ^{[1
]}

Kumar, Sharad ^{[2
]}

Srivastava, Suneel Kumar ^{[2
]}

Kar, Pradip ^{[1
]}

Roy, Poulomi ^{[1
]}

机构：

[1] Birla Inst Technol, Dept Chem, Ranchi 835215, Bihar, India

[2] Indian Inst Technol, Dept Chem, Kharagpur 721302, W Bengal, India

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2018年 / 18卷 / 04期

关键词：

Tin Oxide; Thin Films; SILAR; Annealing; Optical; Electrical; CHEMICAL BATH DEPOSITION; MICROSTRUCTURAL PARAMETERS; SNO2; TEMPERATURE; MOLYBDENUM; PHOTOLUMINESCENCE; DISORDER;

D O I：

10.1166/jnn.2018.14301

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Tin oxide thin films were uniformly deposited by successive ionic layer adsorption reaction (SILAR) method on glass substrates using ethylene diamine as a complexing agent. The proper annealing treatment in air converts as-deposited amorphous films into crystalline and removes defects, reducing strain in the crystal lattice. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) spectroscopy. The film shows good optical transparency in the range of 200-1000 nm wavelength and electrical resistivity decreases upon annealing.

引用

页码：2569 / 2575

页数：7

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