Tin Oxide;
Thin Films;
SILAR;
Annealing;
Optical;
Electrical;
CHEMICAL BATH DEPOSITION;
MICROSTRUCTURAL PARAMETERS;
SNO2;
TEMPERATURE;
MOLYBDENUM;
PHOTOLUMINESCENCE;
DISORDER;
D O I:
10.1166/jnn.2018.14301
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Tin oxide thin films were uniformly deposited by successive ionic layer adsorption reaction (SILAR) method on glass substrates using ethylene diamine as a complexing agent. The proper annealing treatment in air converts as-deposited amorphous films into crystalline and removes defects, reducing strain in the crystal lattice. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) spectroscopy. The film shows good optical transparency in the range of 200-1000 nm wavelength and electrical resistivity decreases upon annealing.