Deposition of Tin Oxide Thin Films by Successive Ionic Layer Adsorption Reaction Method and Its Characterization

被引：6
|
作者：
Raj, Shipra [1 ]
Kumar, Sharad [2 ]
Srivastava, Suneel Kumar [2 ]
Kar, Pradip [1 ]
Roy, Poulomi [1 ]
机构：
[1] Birla Inst Technol, Dept Chem, Ranchi 835215, Bihar, India
[2] Indian Inst Technol, Dept Chem, Kharagpur 721302, W Bengal, India
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2018年 / 18卷 / 04期
关键词：
Tin Oxide; Thin Films; SILAR; Annealing; Optical; Electrical; CHEMICAL BATH DEPOSITION; MICROSTRUCTURAL PARAMETERS; SNO2; TEMPERATURE; MOLYBDENUM; PHOTOLUMINESCENCE; DISORDER;
D O I：
10.1166/jnn.2018.14301
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Tin oxide thin films were uniformly deposited by successive ionic layer adsorption reaction (SILAR) method on glass substrates using ethylene diamine as a complexing agent. The proper annealing treatment in air converts as-deposited amorphous films into crystalline and removes defects, reducing strain in the crystal lattice. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) spectroscopy. The film shows good optical transparency in the range of 200-1000 nm wavelength and electrical resistivity decreases upon annealing.
引用
收藏
页码：2569 / 2575
页数：7
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