Codesign of a PA-Antenna Block in Silicon Technology for 80-GHz Radar Application

被引：15

作者：

Demirel, Nejdat ^{[1
]}

Pinto, Yenny ^{[2
]}

Calvez, Christophe ^{[2
]}

Titz, Diane ^{[3
]}

Luxey, Cyril ^{[3
]}

Person, Christian ^{[2
]}

Gloria, Daniel ^{[4
]}

Belot, Didier ^{[4
]}

Pache, Denis ^{[4
]}

Kerherve, Eric ^{[1
]}

机构：

[1] Univ Bordeaux, Integrat Mat Syst IMS Lab, F-33405 Talence, France

[2] Telecom Bretagne, Lab STICC, F-29238 Brest, France

[3] Univ Nice Sophia Antipolis, EPIB, F-06560 Valbonne, France

[4] STMicroelectonics, F-38926 Crolles, France

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2013年 / 60卷 / 04期

关键词：

BiCMOS SiGe; codesign; integrated dipole antenna; on-wafer measurements; W-band power amplifiers (PAs); GHZ;

D O I：

10.1109/TCSII.2013.2251937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents the codesign of a W-band power amplifier (PA) with a dipole antenna using a 0.13-mu m SiGe bipolar complementary metal oxide semiconductor (BiCMOS) process. The codesign allows the direct interconnection between the PA and the transmitter (Tx) antenna, suppressing the matching network between the two blocks and contributing to loss reduction, energy efficiency enhancement, and miniaturization. The design and the measured results of the monolithic integrated circuit are reported. The 79-GHz differential PA delivers 17 dBm of maximum output power. The chip consumes 300 mA with a 1.8-V supply voltage. The gain of the dipole antenna is -14 dBi in the forward direction and -8.5 dBi in the backward direction. The PA and the antenna size are 0.7 and 0.75 mm(2), respectively. The PA/antenna achieves a maximum power gain of 9.4 dB at 77 GHz and an effective isotropic radiated power of 8.5 dBm.

引用

页码：177 / 181

页数：5

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