Investigation of the sulfur doping profile in femtosecond-laser processed silicon

被引：37
作者：
Guenther, Kay-Michael [1 ]
Gimpel, Thomas [2 ]
Kontermann, Stefan [2 ]
Schade, Wolfgang [2 ]
机构：
[1] Tech Univ Clausthal, EFZN, D-38640 Goslar, Germany
[2] Fraunhofer Heinrich Hertz Inst, D-38640 Goslar, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期
关键词：
INFRARED-ABSORPTION; CENTERS;
D O I：
10.1063/1.4807679
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we demonstrate that silicon can be doped with electrically active sulfur donors beyond the solubility limit of 3 x 10(16) cm(-3). We investigate the sulfur doping profile at the surface of femtosecond-laser processed silicon with secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements. SIMS confirms previous observations that the fs-laser process can lead to a sulfur hyperdoping of 5 x 10(19) cm(-3) at the surface. Nevertheless, the electrical measurements show that less than 1% of the sulfur is electrically active as a donor. (C) 2013 AIP Publishing LLC.
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页数：4
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