AN INVESTIGATION INTO THE ADMITTANCE OF MIS-STRUCTURES BASED ON MBE HgCdTe WITH QUANTUM WELLS

被引：0
作者：
Dzyadukh, S. M. [1 ]
Voitsekhovskii, A. V. [1 ,2 ]
Nesmelov, S. N. [1 ]
Dvoretskii, S. A. [3 ]
Mikhailov, N. N. [3 ]
Gorn, D. I. [1 ]
机构：
[1] Natl Res Tomsk State Univ, VD Kuznetsov Siberian Phys Tech Inst, Tomsk, Russia
[2] Natl Res Tomsk State Univ, Tomsk, Russia
[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
RUSSIAN PHYSICS JOURNAL | 2013年 / 56卷 / 07期
关键词：
MIS-structure; HgCdTe; admittance; quantum well; molecular-beam epitaxy; ELECTRICAL CHARACTERISTICS; SUPERLATTICES;
D O I：
10.1007/s11182-013-0099-0
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1-x Cd (x) Te with quantum wells (QW) in the test-signal frequency range 1 kHz - 2 DeHz at temperatures 8-300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers - 0.65 and 0.62, respectively.
引用
收藏
页码：778 / 784
页数：7
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