AN INVESTIGATION INTO THE ADMITTANCE OF MIS-STRUCTURES BASED ON MBE HgCdTe WITH QUANTUM WELLS

被引：0

作者：

Dzyadukh, S. M. ^{[1
]}

Voitsekhovskii, A. V. ^{[1
,2
]}

Nesmelov, S. N. ^{[1
]}

Dvoretskii, S. A. ^{[3
]}

Mikhailov, N. N. ^{[3
]}

Gorn, D. I. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, VD Kuznetsov Siberian Phys Tech Inst, Tomsk, Russia

[2] Natl Res Tomsk State Univ, Tomsk, Russia

[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2013年 / 56卷 / 07期

关键词：

MIS-structure; HgCdTe; admittance; quantum well; molecular-beam epitaxy; ELECTRICAL CHARACTERISTICS; SUPERLATTICES;

D O I：

10.1007/s11182-013-0099-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1-x Cd (x) Te with quantum wells (QW) in the test-signal frequency range 1 kHz - 2 DeHz at temperatures 8-300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers - 0.65 and 0.62, respectively.

引用

页码：778 / 784

页数：7

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