Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors

被引:0
作者
Lee, CS
Hsu, WC
Su, KH
Huang, JC
Huang, DH
Chen, YJ
机构
[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
关键词
metamorphic; MHEMT; GVS; kink effects;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A delta-doped In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2% are obtained for a 0.65 x 200 mu m(2) gate at 300 K. In addition, the measured f(T) and f(max) are 49.1 and 61.7 GHz, respectively.
引用
收藏
页码:653 / 657
页数:5
相关论文
共 19 条
  • [11] V-band HJFET MMIC DROs with low phase noise, high power, and excellent temperature stability
    Hosoya, K
    Ohata, K
    Funabashi, M
    Inoue, T
    Kuzuhara, M
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (11) : 2250 - 2258
  • [12] Characteristics of In0.425Al0.575As-InxGa1-x as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
    Hsu, WC
    Chen, YJ
    Lee, CS
    Wang, TB
    Huang, JC
    Huang, DH
    Su, KH
    Lin, YS
    Wu, CL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (06) : 1079 - 1086
  • [13] Lee CS, 2005, J KOREAN PHYS SOC, V47, P1046
  • [14] Lee CS, 2004, J KOREAN PHYS SOC, V45, pS513
  • [15] Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
    Li, YJ
    Hsu, WC
    Chen, IL
    Lee, CS
    Chen, YJ
    Lo, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (05): : 2429 - 2433
  • [16] Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMT's by means of an InP etch stop layer
    Meneghesso, G
    Buttari, D
    Perin, E
    Canali, C
    Zanoni, E
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 227 - 230
  • [17] Gas-source molecular beam epitaxy growth of metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP high-electron-mobility structures on GaAs substrates
    Ouchi, K
    Mishima, T
    Kudo, M
    Ohta, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 1004 - 1007
  • [18] Schallner M, 2001, IEEE MTT-S, P2179, DOI 10.1109/MWSYM.2001.967347
  • [19] Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1-xP graded buffer layers
    Yuan, K
    Radhakrishnan, K
    Zheng, HQ
    Yoon, SF
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 641 - 645