Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors

被引:0
作者
Lee, CS
Hsu, WC
Su, KH
Huang, JC
Huang, DH
Chen, YJ
机构
[1] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
关键词
metamorphic; MHEMT; GVS; kink effects;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A delta-doped In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high electron mobility transistor (MHEMT) using a Ni/Au-gate electrode has been successfully fabricated and demonstrated. Compared to conventional Au-gate devices with identical structures, the proposed device improves the kink-effect-related output conductance, the gate-voltage swing, the current drive capability, the breakdown characteristics, and the device power performance. Experimentally, a high extrinsic transconductance of 309 mS/mm, a high drain-source saturation current density of 573 mA/mm, an improved gate-voltage swing of 1.05 V with a corresponding saturation current density of 314 mA/mm, a high saturated output power of 11.3 dBm, and a high power gain of 23.8 dB with a power-added efficiency of 39.2% are obtained for a 0.65 x 200 mu m(2) gate at 300 K. In addition, the measured f(T) and f(max) are 49.1 and 61.7 GHz, respectively.
引用
收藏
页码:653 / 657
页数:5
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