Slot-Coupled Millimeter-Wave Dielectric Resonator Antenna for High-Efficiency Monolithic Integration

被引:21
作者
Ohlsson, Lars [1 ]
Bryllert, Tomas [3 ]
Gustafson, Carl [1 ]
Sjoberg, Daniel [1 ,2 ]
Egard, Mikael [4 ]
Arlelid, Mats [1 ]
Wernersson, Lars-Erik [1 ]
机构
[1] Lund Univ, Dept Elect & Informat Technol, Lund, Sweden
[2] Lund Univ, Dept Elect & Informat Technol, Electromagnet Theory Grp, Lund, Sweden
[3] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Terahertz & Millimetre Wave Lab, S-41296 Gothenburg, Sweden
[4] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden
基金
瑞典研究理事会;
关键词
Antenna efficiency; dielectric resonator antennas (DRAs); millimeter-wave antennas; millimeter-wave communication; TRANSCEIVER; EXCITATION; SILICON; DESIGN;
D O I
10.1109/TAP.2012.2237005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A readily mass-producible, flip-chip assembled, and slot-coupled III-V compound semiconductor dielectric resonator antenna operating in the millimeter-wave spectrum has been fabricated and characterized. The antenna has a 6.1% relative bandwidth, deduced from its 10 dB return loss over 58.8-62.5 GHz, located around the resonance at 60.5 GHz. Gating in the delay-domain alleviated the analysis of the complex response from the measured structure. The radiation efficiency is better than -0.1 dB in simulations fed from the on-chip coupling-structure, but reduced by 3.7 dB insertion loss through the measurement assembly feed. Antenna gain measurements show distortion in relation to the simulated pattern, which has a maximum gain of 6 dBi, mainly caused by interference from the electrically large connector used in the assembly. Mode degeneration in the utilized quadratic-footprint resonator was not seen to influence the performance of the antenna. The antenna is intended for on-chip integration and the fabrication technology allows scaling of the operation frequency over the complete millimeter-wave spectrum.
引用
收藏
页码:1599 / 1607
页数:9
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