High reliability amorphous oxide semiconductor thin-film transistors gated by buried thick aluminum

被引：9

作者：

Luo, Dongxiang ^{[1
]}

Lan, Linfeng ^{[1
]}

Xu, Miao ^{[1
]}

Xu, Hua ^{[1
]}

Li, Min ^{[1
]}

Zou, Jianhua ^{[1
]}

Tao, Hong ^{[1
]}

Wang, Lei ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 9-10期

基金：

中国国家自然科学基金;

关键词：

oxide semiconductors; aluminium oxide; thin-film transistors; indium zinc oxide; TRANSPARENT; COPPER; TTFTS;

D O I：

10.1002/pssr.201206303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-zinc-oxide thin-film transistor (TFT) with a thick aluminum (Al, 1500 nm) gate was demonstrated. The Al gate assembly was planarized by a negative photoresist, and then was further anodized to form a layer of aluminum oxide (Al2O3) as gate dielectric. A good boundary profile between the Al gate and the photoresist was obtained. It was found that increasing the thickness of the Al gate could not only reduce the resistance, but also reduce the hillock density. Furthermore, the TFTs with this buried thick Al gate showed low operation voltage, high mobility, and little threshold voltage shift during gate bias stress. Therefore, it is attractive in large-size, high-resolution flat-panel displays. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：403 / 405

页数：3

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