Structural properties of ZnO: In thin films prepared by sol-gel spin-coating technique

被引:7
作者
Lan, W
Liu, XQ
Huang, CM
Tang, GM
Yang, Y
Wang, YY [1 ]
机构
[1] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
[2] NW Minoriteis Univ, Sch Comp Sci & Informat Engn, Lanzhou 730030, Peoples R China
关键词
ZnO; in thin films; crystal structure; grazing incidence X-ray diffraction; sol-gel;
D O I
10.7498/aps.55.748
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
ZnO: In thin films with thickness varying in the 210-240nm range were prepared on quartz substrates by sol-gel spin-coating technique. The structural properties of these thin films (In/Zn = 0, 1, 2, 3 and 5at%) were studied by grazing incidence X-ray diffraction, conventional X-ray diffraction, Fourier transform infrared spectroscopy, atomic force microscopy and photoluminescence. It is found that the ZnO: In thin films are composed of the unstressed bulk layer packed up by large grains with (002) plane and the surface layer by small grains with (002) and (103) planes, and a proper In doping concentration can improve structural properties of ZnO thin films. The analytic results were further proved by grazing incidence X-ray diffraction at different incidence angles (a = 1, 2, 3 and 5').
引用
收藏
页码:748 / 752
页数:5
相关论文
共 19 条
[1]   Influence of In incorporation on the electronic structure of ZnO nanowires [J].
Bae, SY ;
Choi, HC ;
Na, CW ;
Park, J .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[2]   Structural and optical studies of MgxZn1-xOfilms grown on sapphire [J].
Chen, NB ;
Wu, HZ ;
Qiu, DJ .
ACTA PHYSICA SINICA, 2004, 53 (01) :311-315
[3]   Effects of annealing on the structure and photoluminescence of ZnO films [J].
Fang, ZB ;
Gong, HX ;
Liu, XQ ;
Xu, DY ;
Huang, CM ;
Wang, YY .
ACTA PHYSICA SINICA, 2003, 52 (07) :1748-1751
[4]   Large and abrupt optical band gap variation in In-doped ZnO [J].
Kim, KJ ;
Park, YR .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :475-477
[5]   Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol-gel method [J].
Lee, JH ;
Park, BO .
THIN SOLID FILMS, 2003, 426 (1-2) :94-99
[6]   Effects of rapid thermal annealing on the morphology and electrical properties of ZnO/In films [J].
Ma, TY ;
Shim, DK .
THIN SOLID FILMS, 2002, 410 (1-2) :8-13
[7]   ANNEALING STUDIES OF UNDOPED AND INDIUM-DOPED FILMS OF ZINC-OXIDE [J].
MAJOR, S ;
BANERJEE, A ;
CHOPRA, KL .
THIN SOLID FILMS, 1984, 122 (01) :31-43
[8]  
MO ZS, 2003, CRYSTALLINE POLYM ST, P350
[9]   Epitaxial growth and surface modeling of ZnO on c-plane Al2O3 [J].
Murphy, TE ;
Walavalkar, S ;
Phillips, JD .
APPLIED PHYSICS LETTERS, 2004, 85 (26) :6338-6340
[10]   LOW-TEMPERATURE CONDUCTIVITY OF ZNO FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
NATSUME, Y ;
SAKATA, H ;
HIRAYAMA, T ;
YANAGIDA, H .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4203-4207