Improved air stability of n-channel organic thin-film transistors with surface modification on gate dielectrics

被引：79
作者：
Chen, Fang-Chung [1 ]
Liao, Cheng-Hsiang
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期
关键词：
D O I：
10.1063/1.2980421
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The air stability of n-channel organic thin film transistors based on N, N' -dioctyl-3,4,9,10-perylene tetracarboxylic diimide is improved when modifying the dielectric surfaces with polymer insulators. The hydrophobic nature of the polymer surface inhibits protonation of the siloxyl groups on the SiO(2) surface, leading to fewer SiO(-) groups that can behave as electron traps. Among the polymer insulators tested, the devices modified with hydroxyl-free polymers exhibited the best air stabilities. (c) 2008 American Institute of Physics.
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页数：3
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