An Inductor-less, 10Gbps Trans-impedance Amplifier Operating at Low Supply-Voltage

被引：0
作者：
Zohoori, Soorena [1 ]
Dolatsahi, Mehdi [2 ]
机构：
[1] Islamic Azad Univ, Yazd Branch, Dept Elect Engn, Yazd, Iran
[2] Islamic Azad Univ, Najafabad Branch, Dept Elect Engn, Esfahan, Iran
来源：
2017 25TH IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE) | 2017年
关键词：
Trans-impedance Amplifier; Low-supply voltag; Optical Receiver; Inductor-less;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a trans-impedance amplifier (TIA) for 10Gbps applications in 90nm CMOS technology is proposed. The proposed TIA is combination of a regulated-cascode (RGC) and a wide-swing cascode (WSC) structure. The focus in this work is to design a full-transistor structure which can operate at a low-supply voltage and high speed applications. Simulation results using 90nm CMOS technology parameters in HSPICE shows 48dB Omega trans-impedance gain, 7GHz bandwidth, 10mW power consumption for 0.8 supply voltage and 2.1 mu Arms (or 25.1pA/root Hz) input referred noise.
引用
收藏
页码：145 / 148
页数：4
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