Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum-Electronic Heterostructures

被引：35

作者：

Evans, P. G. ^{[1
]}

Savage, D. E. ^{[1
]}

Prance, J. R. ^{[1
]}

Simmons, C. B. ^{[1
]}

Lagally, M. G. ^{[1
]}

Coppersmith, S. N. ^{[1
]}

Eriksson, M. A. ^{[1
]}

Schuelli, T. U. ^{[2
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

[2] European Synchrotron Radiat Facil, F-38000 Grenoble, France

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 38期

关键词：

Si; SiGe strained quantum wells; synchrotron X-ray nanodiffraction; structural distortions; thickness and strain variations; SILICON; HETEROEPITAXY; FLUCTUATIONS; STRAIN;

D O I：

10.1002/adma.201201833

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Si quantum wells on plastically relaxed SiGe substrates have nanometer variations in crystallographic parameters crucial to quantum-information devices. Synchrotron X-ray nanodiffraction shows that the lattice of the Si quantum well varies in orientation and thickness over lateral distances of 100 nm to 1 μm. The result is that the energy levels of the confined states are shifted by energies similar to the electron temperature. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：5217 / 5221

页数：5

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