Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures -: art. no. 206602

被引：23

作者：

Prunnila, M

Kivinen, P

Savin, A

Törmä, P

Ahopelto, J

机构：

[1] VTT Informat Technol, FIN-02044 Espoo, Finland

[2] Univ Jyvaskyla, Dept Phys, NanoSci Ctr, FIN-40014 Jyvaskyla, Finland

[3] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Helsinki, Finland

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.95.206602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on doped n-type Si samples with electron concentrations (3.5-16.0)x10(25) m(-3) are performed at sub-Kelvin temperatures. We find a good agreement between the theory and the experiment.

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页数：4

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