Electrosynthesis and Studies on CdZnSe Thin Films

被引:0
作者
Mahalingam, T. [1 ]
Dhanasekaran, V. [1 ]
Rajendran, S. [1 ]
Chandramohan, R. [2 ]
Ixtlilco, Luis [3 ]
Sebastian, P. J. [4 ]
机构
[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[2] Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, India
[3] Univ Politecn Estado Guerrero, Taxco 40290, Guerrero, Mexico
[4] CIE UNAM, Solar Hydrogen Fuel Cell Grp, Temixco 62580, Morelos, Mexico
关键词
CdZnSe; Electrodeposition; Thin films; Optical properties; OPTICAL-CONSTANTS; AMORPHOUS-SILICON; DEPOSITION; COMPOSITE;
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Electrodeposited CdZnSe thin films have been prepared at various bath temperatures. The thickness of the films was estimated between 850 nm and 1500 nm by stylus method. The X-ray diffraction patterns revealed that the electrodeposited CdZnSe alloy thin films are polycrystalline in nature with cubic structure. Microstructural properties such as, crystallite size, dislocation density, microstrain and number of crystallites per unit area were calculated using predominant orientation of the films: SEM images revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. The surface roughness of the film was estimated using topographical studies. Optical properties of the film were analyzed from absorption and transmittance studies. Optical band gap of the films increased from 1.67 to 1.72 eV with the increase of bath temperature from 30 to 90 degrees C. The optical constants (refractive index (n) and extinction coefficient (k)) of CdZnSe thin films were evaluated using optical studies.
引用
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页码:37 / 42
页数:6
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