Planar Graphene Vacuum Transistor Performance Potential

被引：0

作者：

Shaw, Jonathan L. ^{[1
]}

Champlain, James G. ^{[1
]}

Kong, Byoung-Don ^{[1
]}

Jensen, Kevin L. ^{[1
]}

Boos, J. Brad ^{[1
]}

机构：

[1] US Naval Res Lab, Electromagnet Technol Branch, Washington, DC 20375 USA

来源：

2016 29TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2016年

关键词：

field emission; graphene; vacuum transistor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have considered the opportunities and challenges of fabricating a planar vacuum transistor using the edge of a single layer graphene sheet as a field emission electron source. The emission current needed to produce significant gain and power at mm-wave frequencies is roughly 100mA/mm. Simple arguments suggest such emission currents are possible.

引用

页数：2