Graphene-based in-plane heterostructures for atomically thin electronics

被引:13
作者
Liu, Jun-jiang [1 ,2 ]
Li, Rui-jie [2 ,3 ]
Li, Hang [2 ,4 ]
Li, Yi-fei [2 ]
Yi, Jun-he [2 ]
Wang, Hai-cheng [3 ]
Zhao, Xiao-chong [4 ]
Liu, Pei-zhi [1 ]
Guo, Jun-jia [1 ]
Liu, Lei [2 ]
机构
[1] Taiyuan Univ Technol, Minist Educ, Key Lab Interface Sci & Engn Adv Mat, Taiyuan 030024, Shanxi, Peoples R China
[2] Peking Univ, Engn Coll, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[3] Univ Sci & Technol Beijing, Natl Ctr Mat Serv Safety, Beijing 100083, Peoples R China
[4] China Acad Engn Phys, Inst Mat, Jiangyou 621908, Peoples R China
关键词
Graphene; In-plane heterostructure; Interface structure; Field-effect transistor; Logic device; HEXAGONAL BORON-NITRIDE; LARGE-AREA; GROWTH; FILMS; OXIDE; TRANSISTORS; TRANSITION; CONTACTS; HYDROGEN; LAYERS;
D O I
10.1016/S1872-5805(18)60352-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two-dimensional materials are promising for use in atomically thin electronics, optoelectronics and flexible electronics because of their versatile band structures, optical transparency, easy transfer to a substrate and compatibility with current technology for integrated circuits. Three key components of contemporary integrated circuits, metals, insulators and semiconductors, have analogues in two-dimensional materials, i.e., graphene, boron nitride (BN) and transition metal dichalcogenides (TMDCs), respectively. Their controlled integration in a single layer is essential for achieving completely two-dimensional devices. In this review, we briefly describe the latest advances in graphene-based planar heterostructures, in graphene-BN, and in graphene-TMDC heterojunctions, focusing on the fabrication methods, the interfacial structure characteristics at the atomic scale and the properties of prototype electronic devices. The challenges and prospects in this field are also discussed.
引用
收藏
页码:481 / 492
页数:11
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