Comparative analysis of light emitting properties of Si:Er and Ge/Si1-xGex epitaxial structures obtained by MBE method

被引：0

作者：

Orlov, LK ^{[1
]}

Potapov, AV

Ivina, NL

Steinman, EA

Vdovin, VI

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod, Russia

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[3] Inst Chem Problems Microelect, Moscow, Russia

来源：

SOLID STATE PHENOMENA | 1999年 / 70卷

关键词：

Si : Er; Si1-xGex layers; Ge/Si1-xGe superlattices; photoluminescence; oxygen complexes; radiative recombination mechanisms;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the nature and the peculiarities of photoluminescence spectra from Si:Er and strained Ge/Si1-xGex structures obtained by the MBE method with sublimating Si sources and find out their common features and differences. We also discuss the mechanisms of photoluminescence in (0.75-0.85) eV region, which can be common for these structures and can be connected with light emission of oxygen complexes in layers. We consider difference ways to improve the light emitting properties of Si. It was shown by comparing single-crystal and porous Si:Er layers that electron low-dimensional effects in a porous system do not cause any observable Er-related properties in photoluminescence spectra. We compared the light emitting properties of Si:Er-O layers and oxygen impurity atmosphere in strong elastic stressed regions near misfit dislocations or Ge inclusions (islands) in Si1-xGex layers (Ge/Si1-xGex superlattices).

引用

页码：377 / 382

页数：6

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