Multiple quantum well photodiode with lateral p-n-junctions

被引：3
作者：
Aroutionian, VM
Petrosyan, SG [1 ]
Yesayan, AE
机构：
[1] Yerevan State Univ, Dept Radiophys, Yerevan 375025, Armenia
[2] Yerevan State Univ, Dept Phys Semicond, Yerevan 375025, Armenia
[3] Russian Armenian Univ, Yerevan 375051, Armenia
来源：
THIN SOLID FILMS | 2004年 / 451卷
关键词：
quantum well; lateral photodiode; p-n-junction;
D O I：
10.1016/j.tsf.2003.11.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report calculations of the responsivity and its spectral dependence of GaAs/GaAlAs quantum well (QW) lateral photodiode under steady-state illumination. The spectral response mainly reflects the features of the QW absorption spectrum. The responsivity increases linearly with applied voltage and at moderate voltages can exceed 1 A/W. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：389 / 392
页数：4
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