Direct Hall measurements of InSb thin films during their irradiation with fast neutrons

被引：5
作者：
Bolshakova, Inessa
Hristoforou, Evangelos
机构：
[1] Natl Tech Univ Athens, Met Phys Lab, Athens 15780, Greece
[2] Lviv Polytech State Univ, Magnet Sensor Lab, UA-290013 Lvov, Ukraine
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2006年 / 129卷 / 1-2期
关键词：
magnetic sensors; semiconductors; neutrons;
D O I：
10.1016/j.sna.2005.11.042
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of Hall measurements of InSb monocrystal whiskers and thin films, during their irradiation with high energy neutrons at the reactor channel are presented in the paper. This unique experiment became possible due to the especially developed magnetic measurement facility with measurement uncertainty of 0.01%. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：192 / 196
页数：5
相关论文
共 7 条
[1]   Improvement of radiation resistance of magnetic field microsensors [J].
Bolshakova, I .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 76 (1-3) :152-155
[2]   Semiconductor sensor materials stable under conditions of hard ionizing radiation [J].
Bolshakova, I .
SENSORS AND ACTUATORS A-PHYSICAL, 2003, 106 (1-3) :344-347
[3]   Novel approaches toward the development of Hall sensor-based magnetometric devices for charged particle accelerators [J].
Bolshakova, I ;
Holyaka, R ;
Leroy, C .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2002, 12 (01) :1655-1658
[4]   Ways of providing radiation resistance of magnetic field semiconductor sensors [J].
Bolshakova, IA ;
Krukovskii, S ;
Holyaka, R ;
Matkovskii, A ;
Moroz, A .
RADIATION PHYSICS AND CHEMISTRY, 2001, 61 (3-6) :743-745
[5]  
IVLEVA V, 1978, SOV PHYS SEMICOND, V12, P534
[6]  
JARMOLUK NI, 1980, SEMICONDUCTORS+, V14, P773
[7]  
TERRA F, 2003, RUS PHYS J, V48, P601
1