First radiation hardness results of the TeraPixel Active Calorimeter (TPAC) sensor

被引:3
作者
Price, T. [1 ]
Watson, N. [1 ]
Wilson, J. [1 ]
Rajovic, V. [2 ]
Cussans, D. [3 ]
Goldstein, J. [3 ]
Head, R. [3 ]
Nash, S. [3 ]
Page, R. [3 ]
Velthuis, J. [3 ]
Strube, J. [4 ]
Stanitzki, M. [5 ]
Dauncey, P. [6 ]
Gao, R. [7 ]
Nomerotski, A. [7 ]
Coath, R. [8 ]
Crooks, J. [8 ]
Turchetta, R. [8 ]
Tyndel, M. [8 ]
Wormh, S. [8 ]
Zhangh, Z. [8 ]
机构
[1] Univ Birmingham, Sch Phys & Astron, Particle Phys Grp, Birmingham B15 2TT, W Midlands, England
[2] Univ Belgrade, Sch Elect Engn, Belgrade, Serbia
[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[4] CERN, CH-1211 Geneva 23, Switzerland
[5] DESY, D-22607 Hamburg, Germany
[6] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2AZ, England
[7] Univ Oxford, Dept Phys, Oxford OX1 3RH, England
[8] Rutherford Appleton Lab, STFC, Didcot OX11 0QX, Oxon, England
关键词
Solid state detectors; Radiation damage to detector materials (solid state); Calorimeter methods; CMOS; TECHNOLOGY; DAMAGE;
D O I
10.1088/1748-0221/8/01/P01007
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The TeraPixel Active Calorimeter (TPAC) sensor is a novel Monolithic Active Pixel Sensors (MAPS) device developed for use as the active layers of a large area, digital electromagnetic calorimeter (DECAL) at a future e(+)e(-) collider. Further applications, which include the tracking and vertex systems for future lepton colliders and LHC upgrades have been proposed and it is therefore essential to characterise the behaviour of the sensor for these applications. We present the first studies of radiation hardness testing of the TPAC sensor. The performance of the sensor has been evaluated after exposures up to 5 Mrad of 50 keV x-rays. Under realistic ILC operating conditions a maximum decrease in the signal to noise ratio of 8% (15%) was observed after 200 krad (5 Mrad) which is already sufficient for proposed applications in future e(+)e(-) colliders.
引用
收藏
页数:16
相关论文
共 14 条
[1]   Updated NIEL calculations for estimating the damage induced by particles and γ-rays in Si and GaAs [J].
Akkerman, A ;
Barak, J ;
Chadwick, MB ;
Levinson, J ;
Murat, M ;
Lifshitz, Y .
RADIATION PHYSICS AND CHEMISTRY, 2001, 62 (04) :301-310
[2]  
[Anonymous], HEPPH0412251
[3]   Design and performance of a CMOS study sensor for a binary readout electromagnetic calorimeter [J].
Ballin, J. A. ;
Coath, R. ;
Crooks, J. P. ;
Dauncey, P. D. ;
Magnan, A. -M. ;
Mikami, Y. ;
Miller, O. D. ;
Noy, M. ;
Rajovic, V. ;
Stanitzki, M. ;
Stefanov, K. D. ;
Turchetta, R. ;
Tyndel, M. ;
Villani, E. G. ;
Watson, N. K. ;
Wilson, J. A. ;
Zhang, Z. .
JOURNAL OF INSTRUMENTATION, 2011, 6
[4]   Monolithic active pixel sensors (MAPS) in a quadruple well technology for nearly 100% fill factor and full CMOS pixels [J].
Ballin, Jamie Alexander ;
Crooks, Jamie Phillip ;
Dauncey, Paul Dominic ;
Magnan, Anne-Marie ;
Mikami, Yoshinari ;
Miller, Owen Daniel ;
Noy, Matthew ;
Rajovic, Vladimir ;
Stanitzki, Marcel ;
Stefanov, Konstantin ;
Turchetta, Renato ;
Tyndel, Mike ;
Villani, Enrico Giulio ;
Watson, Nigel Keith ;
Wilson, John Allan .
SENSORS, 2008, 8 (09) :5336-5351
[5]   Design study for a next generation B factory pixel vertex detector [J].
Bevan, A. ;
Crooks, J. ;
Lintern, A. ;
Nichols, A. ;
Stanitzki, M. ;
Turchetta, R. ;
Wilson, F. F. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 643 (01) :29-35
[6]  
Dauncey P., POS ICHEP 2010, P502
[7]   Gamma Radiation Damage Study of 0.18 μm Process CMOS Image Sensors [J].
Dryer, Ben ;
Holland, Andrew ;
Murray, N. J. ;
Jerram, Paul ;
Robbins, Mark ;
Burt, David .
HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY IV, 2010, 7742
[8]  
Esposito M., 2012, RAD HARDNESS LARGE A
[9]   Radiation damage studies on STAR250 CMOS sensor at 300keV for electron microscopy [J].
Faruqi, A. R. ;
Henderson, R. ;
Holmes, J. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2006, 565 (01) :139-143
[10]   CMOS image sensors: Electronic camera-on-a-chip [J].
Fossum, ER .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (10) :1689-1698