Field and temperature dependence of TDDB of ultrathin gate oxide

The results of an investigation of time-dependent breakdown (TDDB) of intrinsic ultrathin gate oxide are presented for a wide range of oxide fields 4.6 < E-ox < 10.4 MV/cm at elevated temperatures, It was found that TDDB of ultrathin oxide follows the E model down to 4.6 MV/cm, The data show that TDDB t(50) starts deviating from the 1/E model for fields below 7.2 MV/cm, The data also shore that the TDDB activation energy for this type of gate oxide is linearly dependent on oxide field. In addition, me show that the held acceleration parameter gamma decreases as temperature increases.